Anomalies in Static and Dynamic Conductivity of Indium Monoselenide
Identifieur interne : 000581 ( Russie/Analysis ); précédent : 000580; suivant : 000582Anomalies in Static and Dynamic Conductivity of Indium Monoselenide
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Abstract
Results of investigating the static and dynamic conductivity of an InSe single crystal in the temperature range from 4.2 to 300 K are reported. The measurements were performed for a temperature-variation rate of 0.2-0.8 K/min and for currents through a sample of up to 10 μA. Under such conditions, new states can be formed as a result of phase transitions and the dimensionality of the gas of carriers changes. Charge-density waves arising in this case do not penetrate the crystal under the action of an electric field. A substantial difference was observed between the properties of InSe single crystal in the static and dynamic modes. © 2003 MAIK Nauka / Interperiodica .
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Anomalies in Static and Dynamic Conductivity of Indium Monoselenide</title><author><name sortKey="Lashkarev, G V" uniqKey="Lashkarev G">G. V. Lashkarev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, ul. Krzhizhanovskogo 3, Kiev, 03142 Ukraine</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Ukraine</country><wicri:regionArea>Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, ul. Krzhizhanovskogo 3, Kiev</wicri:regionArea><wicri:noRegion>Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, ul. Krzhizhanovskogo 3, Kiev, 03142 Ukraine</wicri:noRegion></affiliation></author><author><name sortKey="Dmitriev, A I" uniqKey="Dmitriev A">A. I. Dmitriev</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, ul. Krzhizhanovskogo 3, Kiev, 03142 Ukraine</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Ukraine</country><wicri:regionArea>Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, ul. Krzhizhanovskogo 3, Kiev</wicri:regionArea><wicri:noRegion>Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, ul. Krzhizhanovskogo 3, Kiev, 03142 Ukraine</wicri:noRegion></affiliation></author><author><name sortKey="Baida, A A" uniqKey="Baida A">A. A. Baida</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, ul. Krzhizhanovskogo 3, Kiev, 03142 Ukraine</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Ukraine</country><wicri:regionArea>Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, ul. Krzhizhanovskogo 3, Kiev</wicri:regionArea><wicri:noRegion>Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, ul. Krzhizhanovskogo 3, Kiev, 03142 Ukraine</wicri:noRegion></affiliation></author><author><name sortKey="Kovalyuk, Z D" uniqKey="Kovalyuk Z">Z. D. Kovalyuk</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, ul. Krzhizhanovskogo 3, Kiev, 03142 Ukraine</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Ukraine</country><wicri:regionArea>Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, ul. Krzhizhanovskogo 3, Kiev</wicri:regionArea><wicri:noRegion>Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, ul. Krzhizhanovskogo 3, Kiev, 03142 Ukraine</wicri:noRegion></affiliation></author><author><name sortKey="Kondrin, M V" uniqKey="Kondrin M">M. V. Kondrin</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of General Physics, Russian Academy of Sciences, ul. Vavilova 38, Moscow, 117942 Russia</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Institute of General Physics, Russian Academy of Sciences, ul. Vavilova 38, Moscow</wicri:regionArea><wicri:noRegion>Institute of General Physics, Russian Academy of Sciences, ul. Vavilova 38, Moscow, 117942 Russia</wicri:noRegion></affiliation></author><author><name sortKey="Pronin, A A" uniqKey="Pronin A">A. A. Pronin</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute of General Physics, Russian Academy of Sciences, ul. Vavilova 38, Moscow, 117942 Russia</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Institute of General Physics, Russian Academy of Sciences, ul. Vavilova 38, Moscow</wicri:regionArea><wicri:noRegion>Institute of General Physics, Russian Academy of Sciences, ul. Vavilova 38, Moscow, 117942 Russia</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0094119</idno><date when="2003-02">2003-02</date><idno type="stanalyst">PASCAL 03-0094119 AIP</idno><idno type="RBID">Pascal:03-0094119</idno><idno type="wicri:Area/Main/Corpus">00DC54</idno><idno type="wicri:Area/Main/Repository">00C684</idno><idno type="wicri:Area/Russie/Extraction">000581</idno></publicationStmt><seriesStmt><idno type="ISSN">1063-7826</idno><title level="j" type="abbreviated">Semiconductors</title><title level="j" type="main">Semiconductors</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Charge density waves</term><term>Electrical conductivity</term><term>Experimental study</term><term>II-VI semiconductors</term><term>Indium compounds</term><term>Selenium compounds</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7260</term><term>7280E</term><term>7130</term><term>Etude expérimentale</term><term>Indium composé</term><term>Sélénium composé</term><term>Conductivité électrique</term><term>Semiconducteur II-VI</term><term>Onde densité charge</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Results of investigating the static and dynamic conductivity of an InSe single crystal in the temperature range from 4.2 to 300 K are reported. The measurements were performed for a temperature-variation rate of 0.2-0.8 K/min and for currents through a sample of up to 10 μA. Under such conditions, new states can be formed as a result of phase transitions and the dimensionality of the gas of carriers changes. Charge-density waves arising in this case do not penetrate the crystal under the action of an electric field. A substantial difference was observed between the properties of InSe single crystal in the static and dynamic modes. © 2003 MAIK Nauka / Interperiodica .</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1063-7826</s0></fA01><fA02 i1="01"><s0>SMICES</s0></fA02><fA03 i2="1"><s0>Semiconductors</s0></fA03><fA05><s2>37</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Anomalies in Static and Dynamic Conductivity of Indium Monoselenide</s1></fA08><fA11 i1="01" i2="1"><s1>LASHKAREV (G. V.)</s1></fA11><fA11 i1="02" i2="1"><s1>DMITRIEV (A. I.)</s1></fA11><fA11 i1="03" i2="1"><s1>BAIDA (A. A.)</s1></fA11><fA11 i1="04" i2="1"><s1>KOVALYUK (Z. D.)</s1></fA11><fA11 i1="05" i2="1"><s1>KONDRIN (M. V.)</s1></fA11><fA11 i1="06" i2="1"><s1>PRONIN (A. A.)</s1></fA11><fA14 i1="01"><s1>Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, ul. Krzhizhanovskogo 3, Kiev, 03142 Ukraine</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Institute of General Physics, Russian Academy of Sciences, ul. Vavilova 38, Moscow, 117942 Russia</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>134-139</s1></fA20><fA21><s1>2003-02</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>12492</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0094119</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Semiconductors</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Results of investigating the static and dynamic conductivity of an InSe single crystal in the temperature range from 4.2 to 300 K are reported. The measurements were performed for a temperature-variation rate of 0.2-0.8 K/min and for currents through a sample of up to 10 μA. Under such conditions, new states can be formed as a result of phase transitions and the dimensionality of the gas of carriers changes. Charge-density waves arising in this case do not penetrate the crystal under the action of an electric field. A substantial difference was observed between the properties of InSe single crystal in the static and dynamic modes. © 2003 MAIK Nauka / Interperiodica .</s0></fC01><fC02 i1="01" i2="3"><s0>001B70B60</s0></fC02><fC02 i1="02" i2="3"><s0>001B70B80E</s0></fC02><fC02 i1="03" i2="3"><s0>001B70A30</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7260</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7280E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7130</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Sélénium composé</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Selenium compounds</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Conductivité électrique</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Electrical conductivity</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur II-VI</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>II-VI semiconductors</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Onde densité charge</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Charge density waves</s0></fC03><fN21><s1>048</s1></fN21><fN47 i1="01" i2="1"><s0>0306M001490</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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